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AFN4998W Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN4998W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOP-8P ) AFN4998W 100V N-Channel Enhancement Mode MOSFET

Key Features

  • 100V/5.6A,RDS(ON)=120mΩ@VGS=10V 100V/4.2A,RDS(ON)=130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

AFN4998W Distributor