AFN5296S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN5296S, a member of the AFN5296S-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN5296S
Manufacturer	Alfa-MOS
File Size	420.28 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN5296S Datasheet
Additional preview pages of the AFN5296S datasheet.

AFN5296S Product details

Description

AFN5296S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

z 100V/20A,RDS(ON)=7.2mΩ@VGS=10V z 100V/15A,RDS(ON)=10.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin.

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Published: Dec 6, 2018 |