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AFN5296S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN5296S, a member of the AFN5296S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN5296S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 100V/20A,RDS(ON)=7.2mΩ@VGS=10V z 100V/15A,RDS(ON)=10.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin.

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Datasheet Details

Part number AFN5296S
Manufacturer Alfa-MOS
File Size 420.28 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN5296S Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology AFN5296S 100V N-Channel Enhancement Mode MOSFET General Description AFN5296S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 100V/20A,RDS(ON)=7.2mΩ@VGS=10V z 100V/15A,RDS(ON)=10.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin Description ( TO-252-2L ) Application z Primary Side Switch z POL Synchronous buck converter z LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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