AFN6003S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6003S, a member of the AFN6003S-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN6003S
Manufacturer	Alfa-MOS
File Size	379.96 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN6003S Datasheet
Additional preview pages of the AFN6003S datasheet.

AFN6003S Product details

Description

AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

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Published: Dec 6, 2018 |