AFN6027S Datasheet, Alfa-MOS

z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-.

Features z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V z Super .

AFN6027S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.