AFN6027S Datasheet | Alfa-MOS

Alfa-MOS Technology 60V N-Channel Enhancement Mode MOSFET General Description AFN6027S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin Description ( TO-252-2L ) Application z Motor and Load Control z Power Management in White LED System z Push Pull...