AFN6035S Datasheet, Alfa-MOS

* 60V/40A,RDS(ON)= 4.5mΩ@VGS=10V
* 60V/30A,RDS(ON)= 5.5mΩ@VGS=6.0V
* 60V/20A,RDS(ON)= 7.2mΩ@VGS=4.5V
* Super high density cell design for extremely low RD.

Features
* 60V/40A,RDS(ON)= 4.5mΩ@VGS=10V
* 60V/30A,RDS(ON)= 5.5mΩ@VGS=6.0V
* 60V/20A,RDS(ON)= 7.2mΩ@VGS=4.

AFN6035S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.