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AFN6098S - N-Channel MOSFET

This page provides the datasheet information for the AFN6098S, a member of the AFN6098S-Alfa N-Channel MOSFET family.

Description

AFN6098S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Pin.

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Datasheet Details

Part number AFN6098S
Manufacturer Alfa-MOS
File Size 465.68 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6098S Datasheet
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Alfa-MOS Technology AFN6098S 60V N-Channel Enhancement Mode MOSFET General Description AFN6098S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Pin Description ( TO-262 ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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