AFN6506S mosfet equivalent, n-channel mosfet.
z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
cu.
Pin Description ( DFN 5X6-8L )
AFN6506S
30V N-Channel Enhancement Mode MOSFET
Features
z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V.
AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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