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AFN6506S - N-Channel MOSFET

Download the AFN6506S datasheet PDF. This datasheet also covers the AFN6506S-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design BOTTOM VIEW.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN6506S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN6506S
Manufacturer Alfa-MOS
File Size 390.18 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6506S Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN 5X6-8L ) AFN6506S 30V N-Channel Enhancement Mode MOSFET Features z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.