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AFN6530S - N-Channel MOSFET

This page provides the datasheet information for the AFN6530S, a member of the AFN6530S-Alfa N-Channel MOSFET family.

Description

AFN6530S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z 30V/15A,RDS(ON)=4.7mΩ@VGS=10V z 30V/10A,RDS(ON)=6.2mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design BOTTOM VIEW.

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Datasheet Details

Part number AFN6530S
Manufacturer Alfa-MOS
File Size 396.70 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6530S Datasheet
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Alfa-MOS Technology General Description AFN6530S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN 5X6-8L ) AFN6530S 30V N-Channel Enhancement Mode MOSFET Features z 30V/15A,RDS(ON)=4.7mΩ@VGS=10V z 30V/10A,RDS(ON)=6.2mΩ@VGS=4.
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