AFN6506S Datasheet | Alfa-MOS

Description AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN 5X6-8L ) 30V N-Channel Enhancement Mode MOSFET Features z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design BOTTOM VIEW Application z Synchronous Rectification z High Power Density DC/DC z VRMs and Embedded DC/DC Pin Define Pin 1~3 4 5~8 SYMBOL Symbol S G D TOP VIEW Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN6506SFN568RG 6506S DFN...