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AFN6561 - 30V N-Channel MOSFET

This page provides the datasheet information for the AFN6561, a member of the AFN6561-Alfa 30V N-Channel MOSFET family.

Description

AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/3.6A,RDS(ON)=75mΩ@VGS=10V.
  • 30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TSOP-6 package design.

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Datasheet Details

Part number AFN6561
Manufacturer Alfa-MOS
File Size 348.13 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet AFN6561 Datasheet
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Alfa-MOS Technology General Description AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6561 30V N-Channel Enhancement Mode MOSFET Features  30V/3.6A,RDS(ON)=75mΩ@VGS=10V  30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TSOP-6 package design Application  Power Management in Note book  LED Display  DC-DC System  LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No.
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