AFN6561 Description
AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6561 30V N-Channel Enhancement Mode MOSFET.
AFN6561 Key Features
- 30V/3.6A,RDS(ON)=75mΩ@VGS=10V
- 30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V
- Super high density cell design for extremely
- TSOP-6 package design
- Power Management in Note book
- LED Display
- DC-DC System
- LCD Panel