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AFN6562 Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TSOP-6 ) AFN6562 30V N-Channel Enhancement Mode MOSFET

Key Features

  • 30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V 30V/2.2A,RDS(ON)=145mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design.

AFN6562 Distributor