AFN6562 Datasheet | Alfa-MOS

Description AFN6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 30V N-Channel Enhancement Mode MOSFET Features 30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V 30V/2.2A,RDS(ON)=145mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN6562TS6RG 62YW TSOP-6 ϡʳ 62 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN6562TS6RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.B Mar. 2011 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 30V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25к Unless otherwise noted) Drain-Source Voltage Gate - Source Voltage Parameter...