AFN6530S Datasheet - Alfa-MOS

N-Channel MOSFET

AFN6530S Features

* z 30V/15A,RDS(ON)=4.7mΩ@VGS=10V z 30V/10A,RDS(ON)=6.2mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design BOTTOM VIEW Application z Notebook V-core z DC/DC Pin Define Pin 1~3 4 5~8 SYMBOL

AFN6530S General Description

AFN6530S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN6530S Datasheet (396.70 KB)

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Datasheet Details

Part number:

AFN6530S

Manufacturer:

Alfa-MOS

File Size:

396.70 KB

Description:

N-channel mosfet.

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AFN6530S N-Channel MOSFET Alfa-MOS

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AFN6530S Features

AFN6530S General Description

Datasheet Details

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Description:

AFN6530S Distributor