AFN6670S Datasheet - Alfa-MOS

N-Channel MOSFET

AFN6670S Features

* z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 8.0mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z DC/DC Primary Side Switch z Industrial z Synchronous Rectification z Load Switch z DC/DC Converte

AFN6670S General Description

AFN6670S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN6670S Datasheet (311.67 KB)

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Datasheet Details

Part number:

AFN6670S

Manufacturer:

Alfa-MOS

File Size:

311.67 KB

Description:

N-channel mosfet.

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AFN6670S N-Channel MOSFET Alfa-MOS

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AFN6670S Features

AFN6670S General Description

Datasheet Details

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