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AFN6632S - 150V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6632S, a member of the AFN6632S-Alfa 150V N-Channel Enhancement Mode MOSFET family.

Description

AFN6632S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=8A,RDS(ON)=45mΩ@VGS=10V.
  • ID=6A,RDS(ON)=58mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN5X6-8L package design.

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Datasheet Details

Part number AFN6632S
Manufacturer Alfa-MOS
File Size 523.00 KB
Description 150V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6632S Datasheet
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Alfa-MOS Technology AFN6632S 150V N-Channel Enhancement Mode MOSFET General Description AFN6632S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features  ID=8A,RDS(ON)=45mΩ@VGS=10V  ID=6A,RDS(ON)=58mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  DFN5X6-8L package design Application  Synchronous Rectifier  Power Supplies  LED TV Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No.
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