AFN6632S Datasheet 150V N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN6632S datasheet PDF. This datasheet also includes the AFN6632S-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN6632S 150v n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN6632S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN6632S
Manufacturer	Alfa-MOS
File Size	523.00 KB
Description	150V N-Channel Enhancement Mode MOSFET
Datasheet	AFN6632S Datasheet

General Description

AFN6632S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN5X6-8L )

Overview

Alfa-MOS Technology AFN6632S 150V N-Channel Enhancement Mode MOSFET.

Key Features

ID=8A,RDS(ON)=45mΩ@VGS=10V.
ID=6A,RDS(ON)=58mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
DFN5X6-8L package design.

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