AFN6632S Description
AFN6632S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L.
AFN6632S Key Features
- ID=8A,RDS(ON)=45mΩ@VGS=10V
- ID=6A,RDS(ON)=58mΩ@VGS=4.5V
- Super high density cell design for extremely low
- DFN5X6-8L package design
- Synchronous Rectifier
- Power Supplies
- LED TV