AFN6670S Datasheet | Alfa-MOS

Description AFN6670S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 8.0mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z DC/DC Primary Side Switch z Industrial z Synchronous Rectification z Load Switch z DC/DC Converters z DC/AC Inverters Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN6670SFN568RG 6670S DFN5X6-8L ※ 6670S : Parts Code ※ YYMMDD : Date Code ※ AFN6670SFN568RG : 13”Tape &...