AFN8411W mosfet equivalent, 100v n-channel mosfet.
* 100V/5.8A,RDS(ON)=125mΩ@VGS=10V
* 100V/4.6A,RDS(ON)=140mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOT-223 package design
.
Pin Description ( SOT-223 )
AFN8411W
100V N-Channel Enhancement Mode MOSFET
Features
* 100V/5.8A,RDS(ON)=125mΩ@VGS.
AFN8411W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download