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AFN8411W - 100V N-Channel MOSFET

Download the AFN8411W datasheet PDF. This datasheet also covers the AFN8411W-Alfa variant, as both devices belong to the same 100v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN8411W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 100V/5.8A,RDS(ON)=125mΩ@VGS=10V.
  • 100V/4.6A,RDS(ON)=140mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN8411W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN8411W
Manufacturer Alfa-MOS
File Size 346.50 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet AFN8411W Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN8411W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8411W 100V N-Channel Enhancement Mode MOSFET Features  100V/5.8A,RDS(ON)=125mΩ@VGS=10V  100V/4.6A,RDS(ON)=140mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  SOT-223 package design Application  Motor and Load Control  Power Management in White LED System  Push Pull Converter  LCD TV Inverter & AD/DC Inverter Systems.