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AFN8439W - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN8439W, a member of the AFN8439W-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN8439W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/6.0A,RDS(ON)=50mΩ@VGS=4.5V 30V/5.5A,RDS(ON)=60mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design.

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Datasheet preview – AFN8439W

Datasheet Details

Part number AFN8439W
Manufacturer Alfa-MOS
File Size 584.94 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8439W Datasheet
Additional preview pages of the AFN8439W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN8439W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8439W 30V N-Channel Enhancement Mode MOSFET Features 30V/6.0A,RDS(ON)=50mΩ@VGS=4.5V 30V/5.5A,RDS(ON)=60mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No.
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