AFN8411W Description
AFN8411W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8411W 100V N-Channel Enhancement Mode MOSFET.
AFN8411W Key Features
- 100V/5.8A,RDS(ON)=125mΩ@VGS=10V
- 100V/4.6A,RDS(ON)=140mΩ@VGS=4.5V
- Super high density cell design for extremely
- SOT-223 package design
- Motor and Load Control
- Power Management in White LED System
- Push Pull Converter
- LCD TV Inverter & AD/DC Inverter Systems