AFN8411W Datasheet | Alfa-MOS

Description AFN8411W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-223 ) 100V N-Channel Enhancement Mode MOSFET Features - 100V/5.8A,RDS(ON)=125mΩ@VGS=10V - 100V/4.6A,RDS(ON)=140mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - SOT-223 package design Application - Motor and Load Control - Power Management in White LED System - Push Pull Converter - LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFN8411WS223RG 8411W SOT-223 ※ YY year code ※ WW week code ※ AFN8411WS223RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free Unit Tape & Reel Quantity 2500 EA ©Alfa-MOS Technology Corp. Rev.B Dec. 2021 .alfa-mos. Page 1 Alfa-MOS Technology 100V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Drain-Source Voltage...