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AFN8411W - 100V N-Channel MOSFET

This page provides the datasheet information for the AFN8411W, a member of the AFN8411W-Alfa 100V N-Channel MOSFET family.

Description

AFN8411W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/5.8A,RDS(ON)=125mΩ@VGS=10V.
  • 100V/4.6A,RDS(ON)=140mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-223 package design.

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Datasheet Details

Part number AFN8411W
Manufacturer Alfa-MOS
File Size 346.50 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet AFN8411W Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN8411W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8411W 100V N-Channel Enhancement Mode MOSFET Features  100V/5.8A,RDS(ON)=125mΩ@VGS=10V  100V/4.6A,RDS(ON)=140mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  SOT-223 package design Application  Motor and Load Control  Power Management in White LED System  Push Pull Converter  LCD TV Inverter & AD/DC Inverter Systems.
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