Datasheet4U Logo Datasheet4U.com

AFN8415W - N-Channel Enhancement Mode MOSFET

Download the AFN8415W datasheet PDF. This datasheet also covers the AFN8415W-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN8415W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 150V/1.5A,RDS(ON)=310mΩ@VGS=10V.
  • 150V/1.0A,RDS(ON)=320mΩ@VGS=6V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN8415W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN8415W
Manufacturer Alfa-MOS
File Size 344.79 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8415W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFN2308AS23RG N-Channel 60V MOSFET VBsemi
AFND1208U1 512Mbit (64M x 8-Bit)NAND FLASH ATO
AFND1G08U3 1G-bit NAND FLASH ATO

Other Datasheets by Alfa-MOS

Part Number Description
AFN8411W 100V N-Channel MOSFET
AFN8412W N-Channel Enhancement Mode MOSFET
AFN8420W 200V N-Channel Enhancement Mode MOSFET
AFN8439W N-Channel Enhancement Mode MOSFET
AFN8459 N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFN8415W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8415W 150V N-Channel Enhancement Mode MOSFET Features  150V/1.5A,RDS(ON)=310mΩ@VGS=10V  150V/1.0A,RDS(ON)=320mΩ@VGS=6V  Super high density cell design for extremely low RDS (ON)  SOT-223 package design Application  Motor and Load Control  Power Management in White LED System  Push Pull Converter  LCD TV Inverter & AD/DC Inverter Systems.
Published: |