AFN8412W Datasheet | Alfa-MOS

Description AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-223 ) 100V N-Channel Enhancement Mode MOSFET Features - 100V/3.6A,RDS(ON)=300mΩ@VGS=10V - 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - SOT-223 package design Application - Motor and Load Control - Power Management in White LED System - Push Pull Converter - LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFN8412WS223RG 8412W SOT-223 ※ YY year code ※ WW week code ※ AFN8412WS223RG : 13” Tape & Reel ; Pb- Free ; Halogen -...