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AFN8412W - N-Channel Enhancement Mode MOSFET

Download the AFN8412W datasheet PDF. This datasheet also covers the AFN8412W-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/3.6A,RDS(ON)=300mΩ@VGS=10V.
  • 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN8412W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN8412W
Manufacturer Alfa-MOS
File Size 345.61 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8412W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN8411W 100V N-Channel MOSFET
AFN8415W N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8412W 100V N-Channel Enhancement Mode MOSFET Features  100V/3.6A,RDS(ON)=300mΩ@VGS=10V  100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  SOT-223 package design Application  Motor and Load Control  Power Management in White LED System  Push Pull Converter  LCD TV Inverter & AD/DC Inverter Systems.
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