AFN8412W Overview
AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8412W 100V N-Channel Enhancement Mode MOSFET.
AFN8412W Key Features
- 100V/3.6A,RDS(ON)=300mΩ@VGS=10V
- 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V
- Super high density cell design for extremely
- SOT-223 package design
- Motor and Load Control
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