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AFN8459 - N-Channel Enhancement Mode MOSFET

Download the AFN8459 datasheet PDF. This datasheet also covers the AFN8459-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN8459-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN8459
Manufacturer Alfa-MOS
File Size 584.86 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8459 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN8411W 100V N-Channel MOSFET
AFN8412W N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8459 30V N-Channel Enhancement Mode MOSFET Features 30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No.
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