AFN8459 Datasheet | Alfa-MOS

Description AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-223 ) 30V N-Channel Enhancement Mode MOSFET Features 30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFN8459S223RG SOT-223 ϡʳ YY year code ϡʳ WW week code ϡʳ AFN8459S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jun. 2011 Unit Tape & Reel Quantity 2500...