Alfa-MOS AFN8459
N-Channel Enhancement Mode MOSFET
| Part No. | AFN8459 |
|---|---|
| Datasheet | AFN8459 Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-223 ) AFN8459 30V N-Channel Enhancement Mode MOSFETFEATURES
30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D SDESCRIPTION
Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFN8459S223RG 8459 SOT-223 ϡʳ YY year code ϡʳ WW week code ϡʳ AFN8459S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jun. 2011 Unit Tape & Reel Quantity 2500 EA
