AFN8412W Datasheet, Alfa-MOS

* 100V/3.6A,RDS(ON)=300mΩ@VGS=10V
* 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* SOT-223 package design .

Pin Description ( SOT-223 ) AFN8412W 100V N-Channel Enhancement Mode MOSFET Features
* 100V/3.6A,RDS(ON)=300mΩ@VGS.

AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.