AFN8415W mosfet equivalent, n-channel enhancement mode mosfet.
150V/1.5A,RDS(ON)=310mΩ@VGS=10V 150V/1.0A,RDS(ON)=320mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) SOT-223 package design
Application
Motor and Loa.
Pin Description ( SOT-223 )
AFN8415W
150V N-Channel Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=310mΩ@VGS=10V 1.
AFN8415W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download