AFN8459 mosfet equivalent, n-channel enhancement mode mosfet.
30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design
Application
Power Managemen.
Pin Description ( SOT-223 )
AFN8459
30V N-Channel Enhancement Mode MOSFET
Features
30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.
AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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