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AFP2333A - P-Channel MOSFET

Download the AFP2333A datasheet PDF. This datasheet also covers the AFP2333A-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP2333A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -25V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V -25V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP2333A-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP2333A
Manufacturer Alfa-MOS
File Size 696.06 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2333A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP2333A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2333A 25V P-Channel Enhancement Mode MOSFET Features -25V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V -25V/-2.4A,RDS(ON)=180mΩ@VGS=-4.