AFP2337S Datasheet | Alfa-MOS

Description AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 100V P-Channel Enhancement Mode MOSFET Features - -100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V - -100V/-2.6A,RDS(ON)= 220mΩ@VGS= -4.5V - Super high density cell design for extremely low RDS (ON) - SOT-23-3L package design Application - Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2337SS23RG 37SYW SOT-23-3L ※ 37S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2337SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev. C April 2024 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 100V P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise...