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AFP2337S - 100V P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP2337S, a member of the AFP2337S-Alfa 100V P-Channel Enhancement Mode MOSFET family.

Description

AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V.
  • -100V/-2.6A,RDS(ON)= 220mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-23-3L package design.

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Datasheet preview – AFP2337S

Datasheet Details

Part number AFP2337S
Manufacturer Alfa-MOS
File Size 531.67 KB
Description 100V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2337S Datasheet
Additional preview pages of the AFP2337S datasheet.

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Alfa-MOS Technology General Description AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2337S 100V P-Channel Enhancement Mode MOSFET Features  -100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V  -100V/-2.6A,RDS(ON)= 220mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  SOT-23-3L package design Application  Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
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