Alfa-MOS AFP2337S
100V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23-3L ) AFP2337S 100V P-Channel Enhancement Mode MOSFETFEATURES
● -100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V● -100V/-2.6A,RDS(ON)= 220mΩ@VGS= -4.5V
● Super high density cell design for extremely low RDS (ON)
● SOT-23-3L package design Application
● Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D
DESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2337SS23RG 37SYW SOT-23-3L ※ 37S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2337SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev. C April 2024 Unit Tape & Reel Quantity 300...