AFP2337S Description
AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2337S 100V P-Channel Enhancement Mode MOSFET.
AFP2337S Key Features
- 100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V
- 100V/-2.6A,RDS(ON)= 220mΩ@VGS= -4.5V
- Super high density cell design for extremely
- SOT-23-3L package design
- Active Clamp Circuits in DC/DC Power Supplies