AFP2333A Datasheet | Alfa-MOS

Description AFP2333A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 25V P-Channel Enhancement Mode MOSFET Features -25V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V -25V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Battery Switch for Portable Devices puters - Bus Switch - Load Switch LED Display Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2333AS23RG 3WYW SOT-23 ϡʳ 3W parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ...