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AFP2337A - 100V P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP2337A, a member of the AFP2337A-Alfa 100V P-Channel Enhancement Mode MOSFET family.

Description

AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V.
  • ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-23 package design.

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Datasheet Details

Part number AFP2337A
Manufacturer Alfa-MOS
File Size 656.09 KB
Description 100V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2337A Datasheet
Additional preview pages of the AFP2337A datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2337A 100V P-Channel Enhancement Mode MOSFET Features  ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V  ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  SOT-23 package design Application  Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
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