AFP2337A Datasheet | Alfa-MOS

Description AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 100V P-Channel Enhancement Mode MOSFET Features - ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V - ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V - Super high density cell design for extremely low RDS (ON) - SOT-23 package design Application - Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2337AS23RG 37AYW SOT-23 ※ 37A parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2337AS23RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B July 2023 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 100V P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise...