AFP2337A Overview
AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2337A 100V P-Channel Enhancement Mode MOSFET.
AFP2337A Key Features
- ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V
- ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V
- Super high density cell design for extremely
- SOT-23 package design
- Active Clamp Circuits in DC/DC Power Supplies