Alfa-MOS AFP2337A
100V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23 ) AFP2337A 100V P-Channel Enhancement Mode MOSFETFEATURES
● ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V● ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V
● Super high density cell design for extremely low RDS (ON)
● SOT-23 package design Application
● Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D
DESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2337AS23RG 37AYW SOT-23 ※ 37A parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2337AS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.B July 2023 Unit Tape & Reel Quantity 3000 EA Page 1 Alfa-...