AFP2337S mosfet equivalent, p-channel enhancement mode mosfet.
z -100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V z -100V/-2.6A,RDS(ON)= 210mΩ@VGS= -4.5V z Super high density cell design for extremely
low RDS (ON) z SOT-23-3L package design
App.
Pin Description ( SOT-23-3L )
AFP2337S
100V P-Channel Enhancement Mode MOSFET
Features
z -100V/-3.8A,RDS(ON)= 200mΩ@VG.
AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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