AFP2367AS, AFP2367AS-Alfa - P-Channel MOSFET

Alfa-MOS

Datasheet Details

Part number	AFP2367AS, AFP2367AS-Alfa
Manufacturer	Alfa-MOS
File Size	603.15 KB
Description	P-Channel MOSFET
Datasheet	AFP2367AS-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFP2367AS, AFP2367AS-Alfa. Please refer to the document for exact specifications by model.

AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

-20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

📁 AFP2367AS Similar Datasheet

Other Datasheets by Alfa-MOS

Published: Nov 29, 2018 |