AFP2363AS Datasheet | Alfa-MOS

Description AFP2363AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 60V P-Channel Enhancement Mode MOSFET Features -60V/-2.4A,RDS(ON)=175mΩ@VGS=-10V -60V/-2.0A,RDS(ON)=225mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Power Management Load switch DC-DC converter Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2363ASS23RG 63AYW SOT-23 ϡʳ 63A parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP2363ASS23RG : 7” Tape & Reel ; Pb- Free...