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AFP2363AS - P-Channel MOSFET

This page provides the datasheet information for the AFP2363AS, a member of the AFP2363AS-Alfa P-Channel MOSFET family.

Description

AFP2363AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -60V/-2.4A,RDS(ON)=175mΩ@VGS=-10V -60V/-2.0A,RDS(ON)=225mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

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Datasheet Details

Part number AFP2363AS
Manufacturer Alfa-MOS
File Size 518.78 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2363AS Datasheet
Additional preview pages of the AFP2363AS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2363AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2363AS 60V P-Channel Enhancement Mode MOSFET Features -60V/-2.4A,RDS(ON)=175mΩ@VGS=-10V -60V/-2.0A,RDS(ON)=225mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Power Management Load switch DC-DC converter Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
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