Datasheet4U Logo Datasheet4U.com

AFP2367AS - P-Channel MOSFET

This page provides the datasheet information for the AFP2367AS, a member of the AFP2367AS-Alfa P-Channel MOSFET family.

Description

AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

📥 Download Datasheet

Datasheet preview – AFP2367AS

Datasheet Details

Part number AFP2367AS
Manufacturer Alfa-MOS
File Size 603.15 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2367AS Datasheet
Additional preview pages of the AFP2367AS datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2367AS 20V P-Channel Enhancement Mode MOSFET Features -20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.
Published: |