Alfa-MOS AFP2367AS
P-Channel MOSFET
| Part No. | AFP2367AS |
|---|---|
| Datasheet | AFP2367AS Download |
| Manufacturer |  Alfa-MOS |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23 ) AFP2367AS 20V P-Channel Enhancement Mode MOSFETFEATURES
-20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Power Management in Note book Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S DDESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2367ASS23RG 67YW S
