AFP2379 mosfet equivalent, p-channel enhancement mode mosfet.
-60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.
Pin Description ( SOT-23-3L )
AFP2379
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V.
AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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