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AFP2379AS - P-Channel MOSFET

This page provides the datasheet information for the AFP2379AS, a member of the AFP2379AS-Alfa P-Channel MOSFET family.

Description

AFP2379AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -60V/-4.2A,RDS(ON)= 80mΩ@VGS=-10V -60V/-3.6A,RDS(ON)= 94mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

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Datasheet preview – AFP2379AS

Datasheet Details

Part number AFP2379AS
Manufacturer Alfa-MOS
File Size 699.13 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2379AS Datasheet
Additional preview pages of the AFP2379AS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2379AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2379AS 60V P-Channel Enhancement Mode MOSFET Features -60V/-4.2A,RDS(ON)= 80mΩ@VGS=-10V -60V/-3.6A,RDS(ON)= 94mΩ@VGS=-4.
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