AFP2379 Datasheet | Alfa-MOS

Description AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 60V P-Channel Enhancement Mode MOSFET Features -60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP2379S23RG 79YW SOT-23-3L ϡʳ 79 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP2379S23RG : 7” Tape & Reel ; Pb- Free ;...