Datasheet4U Logo Datasheet4U.com

AFP2379 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP2379, a member of the AFP2379-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

📥 Download Datasheet

Datasheet preview – AFP2379

Datasheet Details

Part number AFP2379
Manufacturer Alfa-MOS
File Size 567.33 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2379 Datasheet
Additional preview pages of the AFP2379 datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2379 60V P-Channel Enhancement Mode MOSFET Features -60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Published: |