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AFP2913W - P-Channel Enhancement Mode MOSFET

Download the AFP2913W datasheet PDF. This datasheet also covers the AFP2913W-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.8A,RDS(ON)=155mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP2913W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP2913W
Manufacturer Alfa-MOS
File Size 550.86 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2913W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP2911W P-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFP2913W 25V P-Channel Enhancement Mode MOSFET Features z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.8A,RDS(ON)=155mΩ@VGS=-4.