AFP4435W Description
AFP4435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4435W 30V P-Channel Enhancement Mode MOSFET.
AFP4435W Key Features
- 30V/-10A,RDS(ON)=24mΩ@VGS=-10V -30V/
- 7A,RDS(ON)=35mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design