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AFP4435WS, AFP4435WS-Alfa 30V P-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology General .
AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFP4435WS, AFP4435WS-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFP4435WS, AFP4435WS-Alfa
Manufacturer
Alfa-MOS
File Size
392.49 KB
Datasheet
AFP4435WS-Alfa-MOS.pdf
Description
30V P-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFP4435WS, AFP4435WS-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=-9A,RDS(ON)=15mΩ@VGS=-10V
* ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)

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