AFP4435WS Description
AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4435WS 30V P-Channel Enhancement Mode MOSFET.
AFP4435WS Key Features
- ID=-9A,RDS(ON)=15mΩ@VGS=-10V
- ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V
- Super high density cell design for extremely
- SOP-8P package design
- LED Display
- Load Switch
- CCFL Inverter
- Power Management in Notebook puter