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AFP7117WS - 150V P-Channel MOSFET

Download the AFP7117WS datasheet PDF. This datasheet also covers the AFP7117WS-Alfa variant, as both devices belong to the same 150v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • ID=-1.4A,RDS(ON)=750 mΩ@VGS=-10V.
  • ID=-1.0A,RDS(ON)=800 mΩ@VGS=-6V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP7117WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP7117WS
Manufacturer Alfa-MOS
File Size 556.34 KB
Description 150V P-Channel MOSFET
Datasheet download datasheet AFP7117WS Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7117WS 150V P-Channel Enhancement Mode MOSFET Features  ID=-1.4A,RDS(ON)=750 mΩ@VGS=-10V  ID=-1.0A,RDS(ON)=800 mΩ@VGS=-6V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.