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AFP7129S - 60V P-Channel MOSFET

Download the AFP7129S datasheet PDF. This datasheet also covers the AFP7129S-Alfa variant, as both devices belong to the same 60v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP7129S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • ID=-7A,RDS(ON)= 40mΩ@VGS= -10V.
  • ID=-6A,RDS(ON)= 50mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP7129S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP7129S
Manufacturer Alfa-MOS
File Size 360.74 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet AFP7129S Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP7127S P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP7129S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7129S 60V P-Channel Enhancement Mode MOSFET Features  ID=-7A,RDS(ON)= 40mΩ@VGS= -10V  ID=-6A,RDS(ON)= 50mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.