AFP8206 - P-Channel MOSFET

This page provides the datasheet information for the AFP8206, a member of the AFP8206-Alfa P-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFP8206
Manufacturer	Alfa-MOS
File Size	501.37 KB
Description	P-Channel MOSFET
Datasheet	AFP8206 Datasheet
Additional preview pages of the AFP8206 datasheet.

AFP8206, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

-20V/-4.5A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

Other Datasheets by Alfa-MOS

Published: Dec 1, 2018 |