AFP8206 Datasheet, Alfa-MOS

-20V/-4.5A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional o.

Pin Description ( TSOP-6 ) AFP8206 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.5A,RDS(ON)=56mΩ@VGS=4.5V -20.