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AFP8931 - P-Channel Enhancement Mode MOSFET

Download the AFP8931 datasheet PDF. This datasheet also covers the AFP8931-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -30V/-4.6A,RDS(ON)= 36mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 46mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP8931-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP8931
Manufacturer Alfa-MOS
File Size 594.49 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8931 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFP8931 30V P-Channel Enhancement Mode MOSFET Features -30V/-4.6A,RDS(ON)= 36mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 46mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems.