AS29F200 Datasheet - Alliance Semiconductor

AS29F200 5V 256K x 8/128K x 8 CMOS FLASH EEPROM

Selected by A9 = VID(11.5 *12.5V), CE = OE = A1 = A6 = L, enabling outputs. When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products. When A0 is high (VIH), DOUT represents the device code for the AS29F200. Selected with CE = OE = L, WE = H. Dat.

3UHOLPLQDU#LQIRUPDWLRQ ® $65<)533 89#589.ð;245;.ð49#&026#)ODVK#((3520 )HDWXUHV Organization: 256K×8 or 128K×16 Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture T (top) or B (bottom) - Erase any combination of sectors or full chip Single 5.0±0.5V power supply for read/write operations Sector protection High speed 55/70/90/120 ns address access time Automated on-chip prog.

AS29F200 Features

* single 5.0V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. The RY/BY pin, DATA polling of DQ7, or toggle bit

AS29F200 Datasheet (382.88 KB)