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AS29LV160 - 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM

General Description

Selected by A9 = VID(9.5V

10.5V), CE = OE = A1 = A6 = L, enabling outputs.

When A0 is low (VIL) the output data = 52h, a unique Mfr.

code for Alliance Semiconductor Flash products.

Key Features

  • single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and regulated voltages are provided for the Program and Erase operations. A low VCC detector automatically inhibits write operations during power transtitions. The RY/BY pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect end of program or erase operations. The device automatically resets to the read mode after program/erase operations are completed. DQ2 indicates which sectors are being.

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Datasheet Details

Part number AS29LV160
Manufacturer Alliance Semiconductor
File Size 561.89 KB
Description 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM
Datasheet download datasheet AS29LV160 Datasheet

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Other Datasheets by Alliance Semiconductor

Part Number Description
AS29LV400 3V 512K x 8 / 256K x 16 CMOS Flash EEPROM
AS29LV800 3V 1M x 8/512K x 16 CMOS Flash EEPROM
AS29F010 5V 128K x 8 CMOS FLASH EEPROM
AS29F040 5V 512K x 8 CMOS FLASH EEPROM
AS29F200 5V 256K x 8/128K x 8 CMOS FLASH EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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$XJXVW  $GYDQFHG ,QIRUPDWLRQ Š $6/9 9 0 î   0 î   &026 )ODVK ((3520 )HDWXUHV • Organization: 2M×8 / 1M×16 • Sector architecture - One 16K; two 8K; one 32K; and thirty-one 64K byte sectors - One 8K; two 4K; one 16K; and thirty-one 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip • Single 2.7-3.