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AS29LV800 - 3V 1M x 8/512K x 16 CMOS Flash EEPROM

General Description

The AS29LV800 is an 8 megabit, 3.0 volt Flash memory organized as 1 Megabyte of 8 bits/512Kbytes of 16 bits each.

Key Features

  • Organization: 1M×8/512K×16.
  • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture.
  • T (top) or B (bottom) - Erase any combination of sectors or full chip.
  • Single 2.7-3.6V power supply for read/write operations.
  • Sector protection.
  • High speed 70/80/90/120 ns address access time.
  • Automated on-chip programming algorithm - Automati.

📥 Download Datasheet

Datasheet Details

Part number AS29LV800
Manufacturer Alliance Semiconductor
File Size 233.18 KB
Description 3V 1M x 8/512K x 16 CMOS Flash EEPROM
Datasheet download datasheet AS29LV800 Datasheet

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Other Datasheets by Alliance Semiconductor

Part Number Description
AS29LV160 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
March 2001 AS29LV800 ® 3V 1M × 8/512K × 16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip • Single 2.7-3.