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AS29LV400 - 3V 512K x 8 / 256K x 16 CMOS Flash EEPROM

General Description

The AS29LV400 is an 4 megabit, 3.0 volt Flash memory organized as 512Kbyte of 8 bits/256Kbytes of 16 bits each.

Key Features

  • Organization: 512Kx8/256Kx16.
  • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors - One 8K; two 4K; one 16K; and seven 32K word sectors - Boot code sector architecture.
  • T (top) or B (bottom) - Erase any combination of sectors or full chip.
  • Single 2.7-3.6V power supply for read/write operations.
  • Sector protection.
  • High speed 70/80/90/120 ns address access time.
  • Automated on-chip programming algorithm - Automatica.

📥 Download Datasheet

Datasheet Details

Part number AS29LV400
Manufacturer Alliance Semiconductor
File Size 233.75 KB
Description 3V 512K x 8 / 256K x 16 CMOS Flash EEPROM
Datasheet download datasheet AS29LV400 Datasheet

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AS29LV160 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Information March 2001 AS29LV400 ® 3V 512K x 8/256K × 16 CMOS Flash EEPROM Features • Organization: 512Kx8/256Kx16 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors - One 8K; two 4K; one 16K; and seven 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip • Single 2.7-3.