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AS29F200 - 5V 256K x 8/128K x 8 CMOS FLASH EEPROM

General Description

Selected by A9 = VID(11.5

12.5V), CE = OE = A1 = A6 = L, enabling outputs.

When A0 is low (VIL) the output data = 52h, a unique Mfr.

code for Alliance Semiconductor Flash products.

Key Features

  • single 5.0V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. The RY/BY pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect end of program or erase operations. The device automatically resets to the read mode after program/erase operations are completed. The AS29F200 resists accidental erasure.

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Datasheet Details

Part number AS29F200
Manufacturer Alliance Semiconductor
File Size 382.88 KB
Description 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
Datasheet download datasheet AS29F200 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3UHOLPLQDU#LQIRUPDWLRQ ® $65<)533 89#589.ð;245;.ð49#&026#)ODVK#((3520 )HDWXUHV • Organization: 256K×8 or 128K×16 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip • Single 5.0±0.