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AS4C32M32MD2A-25BIN - 1G (64M x 16 and 32M x 32) Low Power DDR2 SDRAM

Key Features

  • Functionality - VDD2 = 1.14.
  • 1.30V - VDDCA/VDDQ = 1.14.
  • 1.30V - VDD1 = 1.70.
  • 1.95V - Interface : HSUL_12 - Data width : x16 / x32 - Clock frequency range : 400 MHz - Four-bit pre-fetch DDR architecture - Eight internal banks for concurrent operation - Multiplexed, double data rate, command/address inputs; commands entered on every CK edge - Bidirectional/differential data strobe per byte of data(DQS/DQS#). - DM masks write date at the both rising and fallin.

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Datasheet Details

Part number AS4C32M32MD2A-25BIN
Manufacturer Alliance Semiconductor
File Size 5.49 MB
Description 1G (64M x 16 and 32M x 32) Low Power DDR2 SDRAM
Datasheet download datasheet AS4C32M32MD2A-25BIN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Revision History 1G (64M x 16 and 32M x 32) Low Power DDR2 SDRAM 134ball FBGA Package AS4C64M16MD2A-25BIN/AS4C32M32MD2A-25BIN Revision Details Rev 1.0 Preliminary datasheet Date Jan 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN DDR Sync DRAM Features • Functionality - VDD2 = 1.14–1.30V - VDDCA/VDDQ = 1.14–1.30V - VDD1 = 1.70–1.