AS4C4M4E1 dram equivalent, 4m x 4 cmos dram.
* Organization: 4,194,304 words × 4 bits
* High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
* TTL-compa.
This product features a high speed page mode operation where read and write operations within a single row (or page) ca.
Address inputs Row address strobe Column address strobe Write enable Input/output Output enable Power Ground A0 to A10
t e
U 4
.c
m o
I/O0 to I/O3
GND
Symbol tRAC tCAA tCAC tOEA tRC tPC ICC1 ICC5
AS4C4M4E1-50 50 25 12 13 85 25 135 2.0
AS4C4M.
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