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Alliance Semiconductor Corporation

AS7C332MPFD18A Datasheet Preview

AS7C332MPFD18A Datasheet

3.3V 2M x 18 pipelined burst synchronous SRAM

No Preview Available !

February 2005
AS7C332MPFD18A
®
3.3V 2M × 18 pipelined burst synchronous SRAM
Features
• Organization: 2,097,152 words × 18 bits
• Fast clock speeds to 200 MHz
• Fast clock to data access: 3.1/3.5/3.8 ns
• Fast OE access time: 3.1/3.5/3.8 ns
• Fully synchronous register-to-register operation
• Double-cycle deselect
• Asynchronous output enable control
• Available in 100-pin TQFP package
www.DataSheet4IUn.dciovmidual byte write and global write
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs
Logic block diagram
CLK
ADV
ADSC
ADSP
A[20:0]
21
GWE
BWb
BWE
BWa
CCEE01
CE2
ZZ
Power
down
OE
Selection guide
Minimum cycle time
Maximum clock frequency
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
LBO
CLK
CS Burst logic
CLR
DQ
CS
Address
register
21
CLK
19 21
2M x 18
Memory
array
18 18
D DQb Q
Byte Write
registers
CLK
D DQa Q
BreygteisWterritse
CLK
D Enable Q
register
CE
CLK
D Enable Q
redgeilsatyer
CLK
2
OE
Output
registers
CLK
Input
registers
CLK
18
DQ[a,b]
-200 -166
56
200 166
3.1 3.5
450 400
170 150
90 90
-133
7.5
133
3.8
350
140
90
Units
ns
MHz
ns
mA
mA
mA
2/10/05, v.1.1
Alliance Semiconductor
1 of 19
Copyright © Alliance Semiconductor. All rights reserved.




Alliance Semiconductor Corporation

AS7C332MPFD18A Datasheet Preview

AS7C332MPFD18A Datasheet

3.3V 2M x 18 pipelined burst synchronous SRAM

No Preview Available !

®
32 Mb Synchronous SRAM products list1,2
Org Part Number
2MX18
AS7C332MPFS18A
1MX32
AS7C331MPFS32A
1MX36
AS7C331MPFS36A
2MX18
AS7C332MPFD18A
1MX32
AS7C331MPFD32A
1MX36
AS7C331MPFD36A
2MX18
www.DataSheet4U.com
1MX32
AS7C332MFT18A
AS7C331MFT32A
1MX36
AS7C331MFT36A
2MX18
AS7C332MNTD18A
1MX32
AS7C331MNTD32A
1MX36
AS7C331MNTD36A
2MX18
AS7C332MNTF18A
1MX32
AS7C331MNTF32A
1MX36
AS7C331MNTF36A
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
Mode
PL-SCD
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
PL-SCD : Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD : Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT : Flow-through Burst Synchronous SRAM
NTD1-PL : Pipelined Burst Synchronous SRAM with NTDTM
NTD-FT : Flow-through Burst Synchronous SRAM with NTDTM
AS7C332MPFD18A
Speed
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of
their respective owners.
2/10/05, v.1.1
Alliance Semiconductor
2 of 19


Part Number AS7C332MPFD18A
Description 3.3V 2M x 18 pipelined burst synchronous SRAM
Maker Alliance Semiconductor Corporation
Total Page 19 Pages
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